Non-volatile memory devices including divided charge storage...

Details Non-volatile memory devices including divided charge storage... Non-volatile memory devices including divided charge storage...

2008-01-15

2008-10-28

Hoang, Quoc D (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S288000, C257SE27078, C257SE29300

Reexamination Certificate

active

07442987

ABSTRACT:
A semiconductor memory device includes a substrate having first and second source/drain regions therein and a channel region therebetween. The device also includes first and second charge storage layers on the channel region, a first insulating layer on the channel region between the first and second charge storage layers, and a gate electrode on the insulating layer opposite the channel region and between inner sidewalls of the first and second charge storage layers. The gate electrode extends away from the substrate beyond the first and second charge storage layers. The device further includes second and third insulating layers extending from adjacent the inner sidewalls of the first and second charge storage layers along portions of the gate electrode beyond the first and second charge storage layers. Related methods of fabrication are also discussed.

REFERENCES:
patent: 6657252 (2003-12-01), Fried et al.
patent: 6844589 (2005-01-01), Kim
patent: 7098502 (2006-08-01), Mathew et al.
patent: 2003/0178670 (2003-09-01), Fried et al.
patent: 2004/0207002 (2004-10-01), Ryu et al.
patent: 2003204068 (2003-07-01), None
patent: 10-2002-0065858 (2002-08-01), None

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