Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2002-02-27
2008-10-07
Dickey, Thomas L. (Department: 2826)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S199000, C438S305000, C257SE21335, C257SE21634
Reexamination Certificate
active
07432146
ABSTRACT:
To make it possible to obtain a sharp impurity profile without presenting a disadvantage such as an increase in parasitic resistance or the like using a laser annealing method to thereby meet sufficiently the requirements for making a semiconductor element finer and more highly integrated. A gate electrode is pattern formed above a semiconductor substrate made of n-type silicon single crystal through a gate insulating film. Thereafter, atoms, Ge+here, having properties just enough to amorphize single crystal Si are ion implanted (shown by arrows) from oblique directions to the Si surface of the substrate with the gate electrode as a mask to melt and re-crystallize the single crystal Si so as to form amorphous regions which seep into the substrate under the gate electrode. Thereafter B+ions are implanted into the amorphous regions and laser irradiation is executed thereon.
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Dickey Thomas L.
Erdem Fazli
Fujitsu Limited
Westerman, Hattori, Daniels & Adrian , LLP.
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