Semiconductor device with substantial driving current and...

Details Semiconductor device with substantial driving current and... Semiconductor device with substantial driving current and...

2006-07-06

2008-10-07

Smoot, Stephen W (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S589000, C257SE21629

Reexamination Certificate

active

07432162

ABSTRACT:
The semiconductor device includes an active region, a stepped recess channel region including vertical channel structures, a gate insulating film, and a gate structure. The active region is defined by a device isolation structure formed in a semiconductor substrate. The stepped recess channel region is formed in the active region. The vertical silicon-on-insulator (SOI) channel structures are disposed at sidewalls of both device isolation structures in a longitudinal direction of a gate region. The gate insulating film is disposed over the active region including the stepped recess channel region. The gate structure is disposed over the stepped recess channel region of the gate region.

REFERENCES:
patent: 6190971 (2001-02-01), Gruening et al.
patent: 6239465 (2001-05-01), Nakagawa
patent: 6855604 (2005-02-01), Lee
patent: 7122425 (2006-10-01), Chance et al.
patent: 7153745 (2006-12-01), Cho
patent: 7285466 (2007-10-01), Kim et al.
patent: 2005/0233513 (2005-10-01), Kim et al.

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