Silicon oxynitride gate dielectric formation using multiple...

Details Silicon oxynitride gate dielectric formation using multiple... Silicon oxynitride gate dielectric formation using multiple...

2006-04-03

2008-09-30

Picardat, Kevin M (Department: 2822)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S769000, C438S775000

Reexamination Certificate

active

07429540

ABSTRACT:
A method for processing a semiconductor substrate in a chamber includes forming a silicon oxynitride film using a two-step anneal process. The first anneal step includes annealing the silicon oxynitride film in the presence of an oxidizing gas that has a partial pressure of about 1 to about 100 mTorr, and the second anneal step includes annealing the silicon oxynitride film with oxygen gas that has a flow rate of about 1 slm. The first anneal step is performed at a higher chamber temperature and higher chamber pressure than the second anneal step.

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