Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-11-16
2008-09-30
Doan, Theresa T (Department: 2814)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257S295000, C257S296000
Reexamination Certificate
active
07429508
ABSTRACT:
A semiconductor memory device includes a semiconductor substrate having a first region and a second region, a transistor placed in the first region of the semiconductor substrate, a first insulating film formed on the semiconductor substrate in the first and second regions and on the transistor, a first ferroelectric capacitor formed on the first insulating film in the first region and electrically connected to the transistor, a hydrogen barrier film formed above the first ferroelectric capacitor and above the first insulating film in the first and second regions, a first contact penetrating the hydrogen barrier film in the first region and electrically connected to the first ferroelectric capacitor, and a second contact which penetrates the hydrogen barrier film in the second region and which is in a floating state.
REFERENCES:
patent: 6441420 (2002-08-01), Nagano et al.
patent: 6495879 (2002-12-01), Kobayashi
patent: 6611015 (2003-08-01), Ozaki et al.
patent: 6972449 (2005-12-01), Yoshikawa et al.
patent: 2004-349424 (2004-12-01), None
Hidaka Osamu
Kanaya Hiroyuki
Kunishima Iwao
Doan Theresa T
Kabushiki Kaisha Toshiba
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
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