Ion implanted microscale and nanoscale device method

Details Ion implanted microscale and nanoscale device method Ion implanted microscale and nanoscale device method

2006-08-15

2008-09-02

Smith, Zandra (Department: 2822)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

C438S690000, C438S738000, C438S743000, C257SE21002

Reexamination Certificate

active

07419917

ABSTRACT:
A method is used for producing nanoscale and microscale devices in a variety of materials, such as silicon dioxide patterned buried films. The method is inexpensive and reliable for making small scale mechanical, optical, or electrical devices and relies upon the implantation of ions into a substrate and subsequent annealing to form a stoichiometric film with the device geometry is defined by the implant energy and dose and so is not limited by the usual process parameters.

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Bioomstein et al., “Laser-chemical three-dimesional writing for microelectromechanics and application to standard-cell microfluidics”, J. Vac. Sci. Technol. B 10(6), Nov./Dec. 1992, pp. 2671-2674.

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