Methods to pattern contacts using chromeless phase shift masks

Details Methods to pattern contacts using chromeless phase shift masks Methods to pattern contacts using chromeless phase shift masks

2002-11-25

2008-05-20

Huff, Mark F. (Department: 1795)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

C430S313000

Reexamination Certificate

active

07374865

ABSTRACT:
Method for using chromeless phase shift lithography (CPL) masks to pattern contacts on semiconductor substrates and corresponding CPL masks for performing the method. The method for patterning contacts includes illuminating a CPL mask comprising a reticle having a plurality of phase-shifting features interspersed with non-phase-shifting areas using a short wavelength UV light source, wherein the phase-shifting features are configured in a pattern corresponding to a target pattern of the contacts on the semiconductor substrate. Phase-shifted and non-phase-shifted light passing through the reticle are projected as an aerial image onto a layer of a negative tone resist applied over the semiconductor substrate to pattern the contacts in the resist. The phase-shifting features are recesses which cause light passing therethrough to be phase-shifted by approximately180° from light passing through non-phase-shifting areas of the mask. Each recess in the CPL mask is used to pattern a separate contact on the semiconductor substrate.

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