Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-09-13
2008-09-09
Geyer, Scott B. (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S149000, C438S151000, C438S197000, C257SE21454, C257SE21642
Reexamination Certificate
active
07422947
ABSTRACT:
A semiconductor device manufacturing method comprises depositing a semiconductor layer and mask material in order over a semiconductor substrate on an insulating film; patterning the semiconductor layer and mask material to form a semiconductor layer in a predetermined region; removing a surface portion of the insulating film by a predetermined depth by performing etching by using the mask material as a mask; forming gate insulating films on at least a pair of opposing side surfaces of the semiconductor layer; depositing silicon on the insulating film, gate insulating films, and mask material; patterning the silicon into a gate pattern to form, on the gate insulating films, a silicon film having the gate pattern on predetermined regions of the pair of opposing side surfaces of the semiconductor layer; ion-implanting a predetermined impurity into the semiconductor layer by using the silicon film as a mask, thereby forming a source region and drain region in two end portions of the semiconductor layer where the silicon film is not formed; and forming a metal film by depositing a metal on at least the silicon film, and forming a gate electrode by reacting the silicon film with the metal film.
REFERENCES:
patent: 6583469 (2003-06-01), Fried et al.
patent: 6770516 (2004-08-01), Wu et al.
patent: 6962843 (2005-11-01), Anderson et al.
patent: 7385237 (2008-06-01), Lee et al.
patent: 8-181323 (1996-07-01), None
patent: 2001-298194 (2001-10-01), None
patent: 2002-110963 (2002-04-01), None
patent: 2002-118255 (2002-04-01), None
patent: WO 2004/019414 (2004-03-01), None
Notification of Reason for Rejection issued by the Japanese Patent Office on Sep. 1, 2006, for Japanese Patent Application No. 2004-148727, and English-language translation thereof.
Ahmadi Mohsen
Geyer Scott B.
LandOfFree
Semiconductor device and method of manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device and method of manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of manufacturing the same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3986263