Method of forming a silicon-rich nanocrystalline structure...

Details Method of forming a silicon-rich nanocrystalline structure... Method of forming a silicon-rich nanocrystalline structure...

2006-07-28

2008-09-02

Nguyen, Ha (Department: 2829)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

On insulating substrate or layer

C438S257000, C438S778000, C438S962000, C117S084000, C118S715000, C427S248100, C427S255280

Reexamination Certificate

active

07419888

ABSTRACT:
In a method of forming a silicon-rich nanocrystalline structure by an ALD process, a first gas including a first silicon compound is provided onto an object to form a silicon-rich chemisorption layer on the object. A second gas including oxygen is provided onto the silicon-rich chemisorption layer to form a silicon-rich insulation layer on the object. A third gas including a second silicon compound is provided onto the silicon-rich insulation layer to form a silicon nanocrystalline layer on the silicon-rich insulation layer. The first gas, the second gas and the third gas may be repeatedly provided to alternately form the silicon-rich nanocrystalline structure having a plurality of silicon-rich insulation layers and a plurality of silicon nanocrystalline layers on the object.

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