Photoresists with reduced outgassing for extreme ultraviolet...

Details Photoresists with reduced outgassing for extreme ultraviolet... Photoresists with reduced outgassing for extreme ultraviolet...

2003-10-14

2008-09-23

Walke, Amanda C. (Department: 1795)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Radiation sensitive composition or product or process of making

C430S311000

Reexamination Certificate

active

07427463

ABSTRACT:
Chemically amplified photoresists with reduced outgassing or no outgassing may be used in a vacuum environment of a lithography tool, such as an extreme ultraviolet lithography tool. A chemically amplified photoresist has a photoacid generator molecule. When the photoacid generator is irradiated, an acid is generated. The acid reacts with a protecting group in the photoresist to form an open-ring structure with reduced outgassing or no outgassing.

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English language machine translation of JP 2002-082441.

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