Silicide process utilizing pre-amorphization implant and...

Details Silicide process utilizing pre-amorphization implant and... Silicide process utilizing pre-amorphization implant and...

2006-07-07

2008-05-27

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S301000, C438S302000, C438S299000, C438S528000, C438S585000, C438S592000, C438S595000, C257SE21410, C257SE21008, C257S336000, C257SE21345

Reexamination Certificate

active

07378323

ABSTRACT:
A gate electrode is formed on a substrate with a gate insulating layer therebetween. A liner is then deposited on sidewalls of the gate electrode. Source/drain extensions are implanted into the substrate. A first spacer is then formed on the liner. Deep source/drain are implanted into the substrate. A second spacer is formed at the foot of the first spacer. A tilt-angle pre-amorphization implant (PAI) is conducted to form an amorphized layer next to the second spacer. A metal layer is then sputtered on the amorphized layer. The metal layer reacts with the amorphized layer to form a metal silicide layer thereto.

REFERENCES:
patent: 5885886 (1999-03-01), Lee
patent: 6897118 (2005-05-01), Poon et al.
patent: 6943085 (2005-09-01), Wang et al.
patent: 2005/0208765 (2005-09-01), Wacquant et al.

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