Method for fabricating semiconductor device

Details Method for fabricating semiconductor device Method for fabricating semiconductor device

2005-09-19

2008-05-13

Le, Thao P. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S199000, C257SE27108

Reexamination Certificate

active

07371628

ABSTRACT:
A method for fabricating a semiconductor device is provided. The method mainly involves steps of forming at least one first patterned high stress layer below a silicon substrate, then forming a semiconductor device onto the substrate, and forming at least one second patterned high stress layer on the semiconductor device. According to the method, the characteristics of the PMOS and the NMOS transistors formed on the same wafer may be improved simultaneously, by utilizing the stress of the patterned layers of high stress material. Further, the mobility of the carriers is enhanced, so that the output characteristic of the transistors can be improved.

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A. Shimizu, et al., “Local Mechanical-Stress Control (LMC): A New Technique for CMOS-Performance Enhancement”, 2001 IEEE.

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