Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-11-21
2008-09-23
Lebentritt, Michael S (Department: 2829)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S246000, C438S255000, C438S386000, C438S398000, C257SE21012, C257SE21013, C257SE21102, C257SE21251, C257SE21309
Reexamination Certificate
active
07427545
ABSTRACT:
The present invention relates to semiconductor devices, preferably dynamic random access memory (DRAM) cells, each of which contains at least one trench capacitor with a buried isolation collar. The trench capacitor is located in a trench in a semiconductor substrate, and it comprises inner and outer electrodes and a dielectric layer. The buried isolation collar is recessed into a sidewall of the trench and has a substantially uniform thickness. Such a buried isolation collar is preferably formed by oxygen implantation before trench etching.
REFERENCES:
patent: 4810664 (1989-03-01), Kamins et al.
patent: 5618751 (1997-04-01), Golden et al.
patent: 5759907 (1998-06-01), Assaderaghi et al.
patent: 5827765 (1998-10-01), Stengl et al.
patent: 5981332 (1999-11-01), Mandelman et al.
patent: 6008104 (1999-12-01), Schrems
patent: 6100131 (2000-08-01), Alsmeier
patent: 6107135 (2000-08-01), Kleinhenz et al.
patent: 6426252 (2002-07-01), Radens et al.
patent: 6576558 (2003-06-01), Lin et al.
patent: 6599798 (2003-07-01), Tews et al.
patent: 6861312 (2005-03-01), Birner et al.
patent: 7112505 (2006-09-01), Wu
patent: 2002/0137278 (2002-09-01), Temmler et al.
Cheng Kangguo
Mandelman Jack A.
International Business Machines - Corporation
Lebentritt Michael S
Schnurmann H. Daniel
Scully , Scott, Murphy & Presser, P.C.
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