Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-03-15
2008-09-02
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S584000, C438S589000, C438S153000, C257SE21546
Reexamination Certificate
active
07419866
ABSTRACT:
A process of forming an electronic device can include forming a patterned oxidation-resistant layer over a semiconductor layer that overlies a substrate, and patterning the semiconductor layer to form a semiconductor island. The semiconductor island includes a first surface and a second surface opposite the first surface, and the first surface lies closer to the substrate, as compared to the second surface. The process can also include forming an oxidation-resistant material along a side of the semiconductor island or selectively depositing a semiconductor material along a side of the semiconductor island. The process can further include exposing the patterned oxidation-resistant layer and the semiconductor island to an oxygen-containing ambient, wherein a first portion of the semiconductor island along the first surface is oxidized during exposing the patterned oxidation-resistant layer, the semiconductor island, and the oxidation-resistant material to an oxygen-containing ambient.
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Actions on the Merits by the U.S.P.T.O. as of Nov. 28, 2007, 1 page.
Nguyen Bich-Yen
Sadaka Mariam G.
Thean Voon-Yew
Fourson George
Freescale Semiconductor Inc.
Parker John M
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