Method for forming a non-volatile memory and a peripheral...

Details Method for forming a non-volatile memory and a peripheral... Method for forming a non-volatile memory and a peripheral...

2006-03-15

2008-03-11

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S258000, C438S266000, C438S288000, C257SE21679

Reexamination Certificate

active

07341914

ABSTRACT:
A method for forming a semiconductor device includes forming a first gate electrode over a semiconductor substrate, wherein the first gate electrode comprises silicon and forming a second gate electrode over the semiconductor substrate and adjacent the first gate electrode, wherein the second gate electrode comprises silicon. Nanoclusters are present in the first gate electrode. A peripheral transistor area is formed devoid of nanoclusters.

REFERENCES:
patent: 5408115 (1995-04-01), Chang
patent: 5824584 (1998-10-01), Chen et al.
patent: 5969383 (1999-10-01), Chang et al.
patent: 6816414 (2004-11-01), Prinz
patent: 6964902 (2005-11-01), Steimle et al.
patent: 2002/0190343 (2002-12-01), Jones et al.
patent: 2005/0176202 (2005-08-01), Hisamoto et al.
patent: 2006/0189079 (2006-08-01), Merchant et al.

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