Method for manufacturing semiconductor with low resistance...

Details Method for manufacturing semiconductor with low resistance... Method for manufacturing semiconductor with low resistance...

2006-08-17

2008-07-15

Sarkar, Asok K (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S330000, C257SE21419

Reexamination Certificate

active

07399677

ABSTRACT:
A method for manufacturing a semiconductor device including the steps of: forming a hole having a predetermined depth in a semiconductor layer of a first conductivity type in correspondence with a drain region, the semiconductor layer being formed on a semiconductor substrate; forming a diffusion source layer containing impurities of a second conductivity type different from the first conductivity type in the hole; forming a source region of the first conductivity type in a region shallower than the depth of the hole in the semiconductor layer; forming a channel region of the second conductivity type to be disposed between the drain region and the source region in a region deeper than the depth of the source region in the semiconductor layer; and heating the semiconductor substrate to a first temperature after completing the diffusion source layer forming step to diffuse the impurities of the second conductivity type from the diffusion source layer into the channel region, thereby forming a low resistance region having a conductivity higher than that of the channel region.

REFERENCES:
patent: 4767722 (1988-08-01), Blanchard
patent: 5034785 (1991-07-01), Blanchard
patent: 6008520 (1999-12-01), Darwish et al.
patent: 6144067 (2000-11-01), Kinzer
patent: 2005/0266642 (2005-12-01), Kubo et al.
patent: 60-046024 (1985-03-01), None
patent: 05-206297 (1993-08-01), None
patent: 08-264772 (1996-10-01), None
patent: 2003-533889 (2003-11-01), None
patent: WO 01/88997 (2001-11-01), None

Affiliated with

Also associated with

Rating

Method for manufacturing semiconductor with low resistance... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for manufacturing semiconductor with low resistance..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing semiconductor with low resistance... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3969547