Method of manufacturing dielectric film of flash memory device

Details Method of manufacturing dielectric film of flash memory device Method of manufacturing dielectric film of flash memory device

2005-12-06

2008-07-01

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S258000, C438S597000, C438S508000, C438S508000

Reexamination Certificate

active

07393744

ABSTRACT:
A method of manufacturing a dielectric film of a flash memory device, including the steps of providing a semiconductor substrate having floating gates formed therein, performing an oxidization process in a decompression state to form a first oxide film of a thin film on the semiconductor substrate including the floating gates, and sequentially forming a nitride film and a second oxide film on the first oxide film to form a dielectric film having the first oxide film, the nitride film and the second oxide film.

REFERENCES:
patent: 5840607 (1998-11-01), Yeh et al.
patent: 6074917 (2000-06-01), Chang et al.
patent: 2004/0005767 (2004-01-01), Dong
patent: 2004/0126972 (2004-07-01), Dong et al.
patent: 2005/0186736 (2005-08-01), Joo
patent: 2005/0266640 (2005-12-01), You et al.
patent: 2004-0046512 (2004-06-01), None
patent: 2004/0101927 (2004-12-01), None
patent: 2005/0004077 (2005-01-01), None

Affiliated with

Also associated with

Rating

Method of manufacturing dielectric film of flash memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing dielectric film of flash memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing dielectric film of flash memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3967421