Non-volatile memory

Details Non-volatile memory Non-volatile memory

2005-12-15

2008-07-08

Dickey, Thomas (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE51004

Reexamination Certificate

active

07397080

ABSTRACT:
A non-volatile memory including at least a substrate, a memory cell and source/drain regions is provided. The memory cell is disposed on the substrate and includes at least a first memory unit and a second memory unit. Wherein, the first memory unit, from the substrate up, includes a floating gate and a first control gate. The second memory unit is disposed on a sidewall of the first memory unit and includes a charge trapping layer and a second control gate. The two source/drain regions are disposed in the substrate at both sides of the memory cell.

REFERENCES:
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patent: 5455792 (1995-10-01), Yi
patent: 6043530 (2000-03-01), Chang
patent: 6949788 (2005-09-01), Fujiwara et al.
patent: 7214579 (2007-05-01), Widdershoven et al.
Article titled “A Novel Flash Memory Device with S Plit Gae Source Side Injection and ONO Charge Storage Stack (SPIN)” jointly authored by Chen et al., 1997 Symposium on VLSI Technology Digest of Technical Papers, pp. 63-64.
Article titled “A Novel 3 VOLTS-Only, Small Sector Erase, High Density Flash E PROM” jointly authored by Kianian et al., 1994 Symposium on VLSI Technology Digest of Technical Papers, pp. 71-72.

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