Etching a substrate: processes – Nongaseous phase etching of substrate
Reexamination Certificate
2006-02-02
2008-03-25
Deo, Duy-Vu N. (Department: 1792)
Etching a substrate: processes
Nongaseous phase etching of substrate
C216S037000, C438S052000, C438S106000, C430S313000, C430S315000, C430S330000, C430S558000, C430S945000
Reexamination Certificate
active
07347953
ABSTRACT:
A method for forming self-assembled patterns on a substrate surface is provided. First, a block copolymer layer, which comprises a block copolymer having two or more immiscible polymeric block components, is applied onto a substrate that comprises a substrate surface with a trench therein. The trench specifically includes at least one narrow region flanked by two wide regions, and wherein the trench has a width variation of more than 50%. Annealing is subsequently carried out to effectuate phase separation between the two or more immiscible polymeric block components in the block copolymer layer, thereby forming periodic patterns that are defined by repeating structural units. Specifically, the periodic patterns at the narrow region of the trench are aligned in a predetermined direction and are essentially free of defects. Block copolymer films formed by the above-described method as well as semiconductor structures comprising such block copolymer films are also described.
REFERENCES:
patent: 6746825 (2004-06-01), Nealey et al.
patent: 7037744 (2006-05-01), Colburn et al.
patent: 2004/0054127 (2004-03-01), Jin
Feijoo, Journal of Materials Science, vol. 5, (1986) pp. 313-314.
C. T. Black “Integration Of Self Assembly For Semiconductor Microelectronics,” IEEE 2005 Custom Integrated Circuits Conference, pp. 87-91 (2005).
R. A. Segalman, A. Hexemer, and E. J. Kramer, “Effects of Lateral Confinement on Order in Spherical Domain Block Copolymer Thin Films,”Macromolecules, vol. 36, pp. 6831-6839, 2003.
R. A. Segalman, K. E. Schaefer, G. H. Fredrickson, E. J. Kramer, and S. Magonov, “Topographic Templating of Islands and Holes in Highly Asymmetric Block Copolymer Films,”Macromolecules, vol. 36, pp. 4498-4506, 2003.
R. A. Segalman, H. Yokoyama, and E. J. Kramer, “Graphoepitaxy of Spherical Domain Block Copolymer Films,”Advanced Materials, vol. 13, pp. 1152-1155, 2001.
J. Y. Cheng, C. A. Ross, E. L. Thomas, H. I. Smith, and G. J. Vancso, “Fabrication of Nanostructures with Long-Range Order Using Block Copolymer Lithography,”Applied Physics Letters, vol. 81, pp. 3657-3659, 2002.
J. Y. Cheng, C. A. Ross, E. L. Thomas, H. I. Smith, and G. J. Vancso, “Templated Self-Assembly of Block Copolymers: Effect of Substrate Topography,”Advanced Materials, vol. 15, pp. 1599-1602, 2003.
C. T. Black and O. Bezenzenet, “Nanometer-Scale Pattern Registration and Alignment by Directed Diblock Copolymer Self-Assembly,”IEEE Transactions On Nanotechnology, vol. 3, pp. 412-415, 2004.
X. Shuaigang, Y. XiaoMin, E. W. Edwards, L. Young-Hye, and P. F. Nealey, “Graphoepitaxy of Cylinder-Forming Block Copolymers for Use as Templates to Pattern Magnetic Metal Dot Arrays,”Nanotechnology, vol. 16, pp. S324-S329, 2005.
D. Sundrani, S. B. Darling, and S. J. Sibener, “Hierarchical assembly and compliance of aligned nanoscale polymer cylinders in confinement,”Langmuir, vol. 20, pp. 5091-5099, 2004.
D. Sundrani, S. B. Darling, and S. J. Sibener, “Guiding Polymers to Perfection: Macroscopic Alignment of Nanoscale Domains,”Nano Letters, vol. 4, pp. 273-276, 2004.
Matthew R. Hammond, Eric Cochran, Glenn H. Fredrickson, and Edward J. Kramer, “Temperature Dependence of Order, Disorder, and Defects in Laterally Confined Diblock Copolymer Cylinder Monolayers,”Macromolecules 38, 6575-6585, 2005.
F. S. Bates and G. H. Fredrickson, “Block Copolymer Thermodynamics: Theory and Experiment,”Annual Review of Physical Chemistry41, 525, 1990.
A. N. Semenov, “Contribution to the Theory of Microphase Layering in Block-Copolymer Melts,”Soviet Physics JETP61, 733, 1985.
P. F. Green et al., “Surface Interaction in Solvent-Cast Polystyrene/Poly (methylmethacrylate) Diblock Copolymers,”American Chemical Society, Macromolecules22, 2189, 1989.
A. W. Adamson and A. P. Gast,Physical Chemistry of Surfaces(Wiley, New York, 1997) p. 365.
J. T. Davies and E. K. Rideal,Interfacial Phenomena(Academic Press, New York, 1963) p. 34-39.
Massachusetts Institute of Technology,Hatsopoulos Microfluids Laboratory, http://web.mit.edu/agrawala/www/NIRT/ca.html; [Not Available].
T. P. Russell, R. P. Hjelm—Jr., and P. A. Seeger, “Temperature Dependence of the Interaction Parameter of Polystyrene and Poly(methyl methacrylate),”American Chemical Society, Macromolecules23, 890, 1990.
Watson Loh, “Block Copolymers Micelles,”Encyclopedia of Surface and Colloid Science802-813, 2002; and.
Joy Y. Cheng, Anne M. Mayes and Caroline A. Ross, “Nanostructure Engineering by Templated Self-Assembly of Block Copolymers,”Nat. Mat. 3 823-828, 2004.
Black Charles T.
Rulz Ricardo
Sandstrom Robert L.
Angadi Maki
Deo Duy-Vu N.
International Business Machines - Corporation
Scully Scott Murphy & Presser, PC
Tuchman, Esq. Ido
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