Methods of fabricating semiconductor devices

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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Details

C438S296000, C438S301000, C438S304000

Reexamination Certificate

active

07338870

ABSTRACT:
Methods of recovering damage on a semiconductor device by performing a hydrogen annealing process are disclosed. An example disclosed method includes forming an STI structure on a semiconductor substrate; forming a gate electrode and spacers on the sidewalls of the gate electrode; implanting ions into source and drain regions and performing a hydrogen annealing process; and performing a thermal treatment for the resulting structure to diffuse and align the ions in the source/drain region.

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patent: 10-2002-045259 (2002-06-01), None
patent: 10 2003 002519 (2003-01-01), None

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