Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2004-12-30
2008-03-04
Lee, Hsien-Ming (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S296000, C438S301000, C438S304000
Reexamination Certificate
active
07338870
ABSTRACT:
Methods of recovering damage on a semiconductor device by performing a hydrogen annealing process are disclosed. An example disclosed method includes forming an STI structure on a semiconductor substrate; forming a gate electrode and spacers on the sidewalls of the gate electrode; implanting ions into source and drain regions and performing a hydrogen annealing process; and performing a thermal treatment for the resulting structure to diffuse and align the ions in the source/drain region.
REFERENCES:
patent: 6274420 (2001-08-01), Xiang et al.
patent: 6420770 (2002-07-01), Xiang et al.
patent: 6548844 (2003-04-01), Fukuzumi et al.
patent: 6696349 (2004-02-01), Vollrath et al.
patent: 6849483 (2005-02-01), King
patent: 6974755 (2005-12-01), Ko et al.
patent: 2003/0045039 (2003-03-01), Shin et al.
patent: 2004/0041216 (2004-03-01), Mori
patent: 10-2002-045259 (2002-06-01), None
patent: 10 2003 002519 (2003-01-01), None
Dongbu Electronics Co. Ltd.
Lee Hsien-Ming
Saliwanchik Lloyd & Saliwanchik
LandOfFree
Methods of fabricating semiconductor devices does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Methods of fabricating semiconductor devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods of fabricating semiconductor devices will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3963881