Method of fabricating a nonvolatile storage array with...

Details Method of fabricating a nonvolatile storage array with... Method of fabricating a nonvolatile storage array with...

2005-07-25

2008-01-01

Smith, Matthew (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S197000, C438S589000, C257SE21679, C257SE21422, C257SE21646, C257SE27103, C257SE29304

Reexamination Certificate

active

07314798

ABSTRACT:
A method of making an array of storage cells includes a first source/drain region underlying a first trench defined in a semiconductor substrate and a second source/drain region underlying a second trench in the substrate. A charge storage stack lines each of the trenches where the charge storage stack includes a layer of discontinuous storage elements (DSEs). A control gate overlies the first trench. The control gate may run perpendicular to the trenches and traverse the first and second trenches. In another implementation, the control gate runs parallel with the trenches. The storage cell may include one or more diffusion regions occupying an upper surface of the substrate between the first and second trenches. The diffusion region may reside between first and second control gates that are parallel to the trenches. Alternatively, a pair of diffusion regions may occur on either side of a control gate that is perpendicular to the trenches.

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