Method for manufacturing device isolation film of...

Details Method for manufacturing device isolation film of... Method for manufacturing device isolation film of...

2004-11-30

2008-03-04

Wilczewski, M (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S296000, C438S437000, C438S743000, C438S770000, C438S954000

Reexamination Certificate

active

07338850

ABSTRACT:
A method for manufacturing device isolation film of semiconductor device is disclosed. The method utilizes a plasma oxidation of a liner nitride film exposed by etching a liner oxide the film in peripheral region prior to the formation of device isolation film to prevent the generation of a electron trap which causes trapping of electrons at the interface of the oxide film and the nitride film resulting in a HEIP phenomenon.

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