Solution deposition of chalcogenide films containing...

Details Solution deposition of chalcogenide films containing... Solution deposition of chalcogenide films containing...

2005-02-14

2008-03-11

Pham, Long (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S095000, C438S197000, C438S590000, C438S602000

Reexamination Certificate

active

07341917

ABSTRACT:
Metal chalcogenide films comprising at least one transition metal chalcogenide are prepared by dissolving a metal chalcogenide containing at least one transition metal chalcogenide in a hydrazine compound and, optionally, an excess of chalcogen to provide a precursor of the metal chalcogenide; applying a solution of said precursor onto a substrate to produce a film of said precursor; and annealing the film of the precursor to produce the metal chalcogenide film comprising at least one transition metal chalcogenide. The process can be used to prepare field-effect transistors and photovoltaic devices.

REFERENCES:
patent: 5347144 (1994-09-01), Garnier et al.
patent: 6180956 (2001-01-01), Chondroudis et al.
patent: 6420056 (2002-07-01), Chondroudis et al.
patent: 2004/0062708 (2004-04-01), Remskar et al.
patent: 2005/0009225 (2005-01-01), Mitzi et al.
patent: 2005/0009229 (2005-01-01), Mitzi
patent: 2000277537 (2000-04-01), None
patent: WO-03049515 (2003-06-01), None
“Photovoltaic Effect in Cadmium Sulfide”, Reynolds, et al.,Aeronautical Research Laboratory, Wright Air Development Center, Air Research and Development Command, United States Air force, Wright-Patterson Air Force Base, Ohio (Received Sep. 2, 1954), pp. 533-534.
“Organic light-emitting diode with 20 Im/W efficiency using a triphenyldiamine slde-group polymer as the hole transport layer”, Shaheen et al.,Applied Physics Lettersvol. 74, No. 21, May 24, 1999, pp. 3212-3214.
“Hybrid Field-Effect Transistor Based on a Low-Temperature Melt-Processed Channel Layer”, Mitzi et al.,Advanced Materials—Dec. 3, 2002, 14, No. 23, pp. 1772-1776.
“Organic thin-film transistors: A review of recent advances” Dimitrakopoulos et al.,IBM J. Res.&Dev.vol. 45, No. 1, Jan. 2001, pp. 11-27.
“Organic-inorganic electronics”, Mitzi et al.,IBM J. Res.&Dev.vol. 45, No. 1, Jan. 2001, pp. 29-45.
Fundamental Optical Absorption In SnS2and SnSe2, Domingo et al.,Department of Electrical Engineering, Northwestern University, Evanston, Illinois, Physical Review, vol. 143, No. 2, Mar. 1966.
“Solid State Electronic Devices,” (second edition), Streetman,Department of Electrical Engineering and Coordinated Science Laboratory University of Illinois at Urbana-Champaign, p. 443.
“All-inorganic Field Effect Transistors Fabricated by Printing” Ridley et al., Science Magazine, vol. 286, pp. 746-749, Oct. 22, 1999.
“Composition of CuInS2thin films prepared by spray pyrolysis”, Krunks et al., Thin Solid Films 403-404 (2002) pp. 71-75.
“Physics of Semiconductor Devices,” (second edition), Sze,Bell Laboratories, Incorporated, Murray Hill, New Jersey, p. 849.

Affiliated with

Also associated with

Rating

Solution deposition of chalcogenide films containing... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Solution deposition of chalcogenide films containing..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Solution deposition of chalcogenide films containing... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3961195