Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2008-01-29
2008-01-29
Le, Thao P. (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C257S436000
Reexamination Certificate
active
10664866
ABSTRACT:
It is an object of the present invention to apply a technique for removing the adverse effect of a substrate shrinkage due to a heat treatment, and further forming a fine and high-quality insulating film, and a semiconductor device that can realize high-performance and high-reliability by using the same, to a transistor formed by laminating a semiconductor film or an insulating film over a glass substrate.A heat treatment that is necessary in a step of forming a thin film element by laminating a semiconductor film or an insulating film over a glass substrate is performed without thermally-damaging the substrate. For the purpose, a light-absorbing layer that can absorb pulsed light over a particular portion of the substrate in which the thin film element is formed is locally formed, and the heat treatment is performed. A semiconductor layer or an insulating layer is disposed between the light-absorbing layer and the substrate, and thus, the portion overlapping with the light-absorbing layer is selectively heated to high temperature and the heat treatment can be performed.
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Takayama Toru
Yamaguchi Tetsuji
Yamazaki Shunpei
Le Thao P.
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
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