Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of...
Reexamination Certificate
2008-05-06
2008-05-06
Potter, Roy (Department: 2822)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
C438S072000
Reexamination Certificate
active
11477287
ABSTRACT:
This invention includes methods of forming patterned photoresist layers over semiconductor substrates. In one implementation, a porous antireflective coating is formed over a semiconductor substrate. A photoresist footer-reducing fluid is provided within pores of the porous antireflective coating. A positive photoresist is formed over the porous antireflective coating having the fluid therein. The positive photoresist is patterned and developed to form a patterned photoresist layer, with the fluid within the pores being effective to reduce photoresist footing in the patterned photoresist layer than would otherwise occur in the absence of the fluid within the pores. Other aspects and implementations are contemplated.
REFERENCES:
patent: 3772101 (1973-11-01), Chumbres et al.
patent: 4086074 (1978-04-01), Minot et al.
patent: 4622735 (1986-11-01), Shibata
patent: 4683645 (1987-08-01), Naguib et al.
patent: 4693910 (1987-09-01), Nakajima et al.
patent: 4766090 (1988-08-01), Coquin et al.
patent: 5099304 (1992-03-01), Takemura et al.
patent: 5236865 (1993-08-01), Sandhu et al.
patent: 5406123 (1995-04-01), Narayan
patent: 5444024 (1995-08-01), Anjum et al.
patent: 5470784 (1995-11-01), Coleman
patent: 5470794 (1995-11-01), Anjum
patent: 5670298 (1997-09-01), Hur
patent: 5677102 (1997-10-01), Shiihara
patent: 5955244 (1999-09-01), Duval
patent: 6013582 (2000-01-01), Ionov et al.
patent: 6037239 (2000-03-01), Jennings
patent: 6096621 (2000-08-01), Jennings
patent: 6096634 (2000-08-01), Nguyen
patent: 6130140 (2000-10-01), Gonzalez
patent: 6133105 (2000-10-01), Chen et al.
patent: 6133116 (2000-10-01), Kim et al.
patent: 6156674 (2000-12-01), Li et al.
patent: 6165834 (2000-12-01), Agarwal et al.
patent: 6177235 (2001-01-01), Francou et al.
patent: 6188097 (2001-02-01), Derderian et al.
patent: 6238994 (2001-05-01), Derderian et al.
patent: 6255035 (2001-07-01), Minter et al.
patent: 6281100 (2001-08-01), Yin et al.
patent: 6297527 (2001-10-01), Agarwal et al.
patent: 6350560 (2002-02-01), Sahbari
patent: 6376149 (2002-04-01), Grober et al.
patent: 6399982 (2002-06-01), Derderian et al.
patent: 6511896 (2003-01-01), Basceri et al.
patent: 6608343 (2003-08-01), Derderian et al.
patent: 6617250 (2003-09-01), Basceri et al.
patent: 6649466 (2003-11-01), Basceri et al.
patent: 6744093 (2004-06-01), Agarwal et al.
patent: 6746916 (2004-06-01), Agarwal et al.
patent: 6753618 (2004-06-01), Basceri et al.
patent: 6777739 (2004-08-01), Agarwal et al.
patent: 6780728 (2004-08-01), Tran
patent: 6780766 (2004-08-01), Basceri et al.
patent: 6817086 (2004-11-01), Lu et al.
patent: 6844131 (2005-01-01), Oberlander et al.
patent: 6900497 (2005-05-01), Agarwal et al.
patent: 6969677 (2005-11-01), Derderian et al.
patent: 7056824 (2006-06-01), Mirth
patent: 7115532 (2006-10-01), Daley
patent: 7119025 (2006-10-01), Daley et al.
patent: 2001/0006759 (2001-07-01), Shipley, Jr. et al.
patent: 2002/0076879 (2002-06-01), Lee et al.
patent: 2002/0196651 (2002-12-01), Weis
patent: 2003/0013272 (2003-01-01), Hong et al.
patent: 2003/0045060 (2003-03-01), Ahn et al.
patent: 2003/0045078 (2003-03-01), Ahn et al.
patent: 2003/0205729 (2003-11-01), Basceri et al.
patent: 2003/0213987 (2003-11-01), Basceri et al.
patent: 2003/0219942 (2003-11-01), Choi et al.
patent: 2004/0043228 (2004-03-01), Derderian et al.
patent: 2004/0046197 (2004-03-01), Basceri et al.
patent: 2004/0245559 (2004-12-01), Pontoh et al.
patent: 2004/0245560 (2004-12-01), Pontoh et al.
patent: 2005/0244571 (2005-11-01), Walheim
patent: 0 851 473 (1998-01-01), None
patent: 2002-323775 (2002-11-01), None
Lin, J.C., “How to Eliminate Voiding in Porous Low-k Dielectrics and the Mechanism of void Formation”, pp. 1-4.
Singh et al., “High and Low Dielectric Constant Materials, The Electrochemical Society Interface, Summer” pp. 26-30.
Lemberger et al., “Electrical characterization and reliability aspects of zirconium silicate films obtained from novel MOCVD precursors, Microelectronic Engineering(2004)”, pp. 315-320.
ABSTRACT: Basceri et al., Atomic Layer Deposition for Nanoscale CU Metalization, 10 pages (pre-Apr. 2004).
En et al., Plasma immersion ion implantation reactor design considerations for oxide charging, 85 Surface and Coatings Technology 64-69 (1966).
Ku et al., The Application of Ion Beam Mixing, Doped Silicide, and Rapid Thermal Processing of Self-Aligned Silicide Technology, 137 J. Electrochem. Soc. No. 2, pp. 728-740 (Feb. 1990).
Park, et al., “COB Stack DRAM Cell Technology beyond 100 nm Technology Node”; pp. 349.1-349.3.
Rubin et al., Shallow-Junction Diode Formation by implantation of Arsenic and Boron Through Titanium-Silicide Films and . . . , 17 IEEE Transactions on Electron Devices, No. 1, pp. 183-190 (Jan. 1990).
Chang et al., Silicon surface treatments in advanced MOS gate processing, Microelectronic Engineering, (2004), pp. 130-135.
Lu et al., “Effects of the TaNxinterface layer on doped tantalum oxide high-k films”, VACUUM (2004), pp. 1-9.
Robertson et al., “Atomic structure, band offsets, growth and defects at high-K oxide:Si enterfaces, Microelectronic Engineering”, (2004) pp. 112-120.
U.S. Appl. No. 10/609,311, filed Jun. 2003, Yates.
U.S. Appl. No. 10/655,997, filed Sep. 2003, Daley.
U.S. Appl. No. 10/689,958, filed Oct. 2003, Basceri.
U.S. Appl. No. 10/822,118, filed Apr. 2004, Sandhu et al.
U.S. Appl. No. 10/879,367, filed Jun. 2004, Blalock et al.
U.S. Appl. No. 10/932,218, filed Sep. 2004, Basceri et al.
Blalock Guy T.
Daley Jon P.
Sandhu Gurtej S.
Micro)n Technology, Inc.
Potter Roy
Wells St. John P.S.
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