Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2008-05-06

2008-05-06

Luu, Chuong A. (Department: 2892)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S270000, C438S233000, C438S199000

Reexamination Certificate

active

10948661

ABSTRACT:
A method for manufacturing a semiconductor device includes forming a gate-insulating film on a semiconductor substrate; forming a gate electrode on the gate-insulating film to be electrically insulated from the semiconductor substrate; etching the gate electrode, the gate insulating film and the semiconductor substrate to form a trench which is used to electrically isolate a device region for forming a device from the remainder region on the substrate top surface; and etching the inside of the trench using a gas containing Cl2and HBr with a different condition from the etching condition of the semiconductor substrate.

REFERENCES:
patent: 4985368 (1991-01-01), Ishii et al.
patent: 5939765 (1999-08-01), Zheng et al.
patent: 6081662 (2000-06-01), Murakami et al.
patent: 6107158 (2000-08-01), Zheng et al.
patent: 6140206 (2000-10-01), Li et al.
patent: 6165854 (2000-12-01), Wu
patent: 6207534 (2001-03-01), Chan et al.
patent: 6277710 (2001-08-01), Kim et al.
patent: 6468926 (2002-10-01), Irino et al.
patent: 6482701 (2002-11-01), Ishikawa et al.
patent: 6596608 (2003-07-01), Saito
patent: 6600189 (2003-07-01), Sato et al.
patent: 6720235 (2004-04-01), Ku et al.
patent: 09-162168 (1997-06-01), None
patent: 2000-299374 (2000-10-01), None
patent: 2000-311938 (2000-11-01), None

Affiliated with

Also associated with

Rating

Semiconductor device and method of manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method of manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of manufacturing the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3950880