Nitriding method of gate oxide film

Details Nitriding method of gate oxide film Nitriding method of gate oxide film

Filed on

2008-09-30

Date issued

2008-09-30

Examiner

Lindsay, Jr., Walter L (Department: 2812)

Patent Class

Semiconductor device manufacturing: process

SubClass

Coating of substrate containing semiconductor region or of...

SubSubClass

By reaction with substrate

Other Related Categories

C438S769000, C257SE21193, C257SE21209

Type

Reexamination Certificate

Status

active

Patent number

11616217

Description

ABSTRACT:
A substrate processing method comprises the step of forming an oxide film on a silicon substrate surface, and introducing nitrogen atoms into the oxide film by exposing the oxide film to nitrogen radicals excited in plasma formed by a microwave introduced via a planar antenna.

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