Method of fabricating a lateral double-diffused MOSFET...

Details Method of fabricating a lateral double-diffused MOSFET... Method of fabricating a lateral double-diffused MOSFET...

2008-07-29

2008-07-29

Nguyen, Tuan H (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S301000, C438S306000

Reexamination Certificate

active

11435079

ABSTRACT:
A method of monolithically fabricating a lateral double-diffused MOSFET (LDMOS) transistor having a source, drain, and a gate on a substrate, with a process flow that is compatible with a CMOS process flow, is disclosed.

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