Method of preparing a film layer-by-layer using plasma...

Details Method of preparing a film layer-by-layer using plasma... Method of preparing a film layer-by-layer using plasma...

2008-03-04

2008-03-04

Dang, Trung (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S685000, C257SE21161, C257SE21170

Reexamination Certificate

active

11206994

ABSTRACT:
A method for forming a thin film on a substrate layer by layer using plasma enhanced atomic layer deposition is described. The method comprises using a low power reduction step for at least one cycle in order to substantially avoid partial layer film growth, followed by using a high power reduction step for each cycle thereafter in order to increase deposition rate.

REFERENCES:
patent: 7022605 (2006-04-01), Doan et al.
patent: 2004/0038525 (2004-02-01), Meng et al.
patent: 2004/0224504 (2004-11-01), Gadgil
patent: 2004/0231799 (2004-11-01), Lee et al.
patent: 2006/0211246 (2006-09-01), Ishizaka et al.

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