Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

2008-01-29

2008-01-29

Booth, Richard A. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21179, C438S954000

Reexamination Certificate

active

11276402

ABSTRACT:
A method of manufacturing a semiconductor memory device comprises the steps of: preparing a semiconductor substrate having a gate insulation film and a gate electrode, the gate insulation film being formed on a predetermined active region in the semiconductor substrate, and the gate electrode being formed on the gate insulation film; forming a first insulation film covering the gate electrode and at least a part of the semiconductor substrate; charging the first insulation film; and forming a second insulation film for charge storage on the first insulation film.

REFERENCES:
patent: 7074677 (2006-07-01), Halliyal et al.
patent: 2004/0197995 (2004-10-01), Lee et al.
patent: 10/223783 (1998-08-01), None
patent: 2003/78045 (2003-03-01), None

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