Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-05-27
2008-05-27
Tran, Thien F (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S335000, C257S336000, C257SE21417
Reexamination Certificate
active
11705354
ABSTRACT:
A field effect transistor includes a gate that is formed in a channel region of an active region defined on a substrate. A source is formed at a first surface portion of the active region that is adjacently disposed at a first side face of the gate. A drain is formed at a second surface portion of the active region that is opposite to the first surface portion with respect to the gate. The drain has a protruded portion that is protruded from a surface portion of the substrate.
REFERENCES:
patent: 5798278 (1998-08-01), Chan et al.
patent: 6441431 (2002-08-01), Efland et al.
patent: 2000-40817 (2000-02-01), None
patent: 10-0251754 (2000-01-01), None
Chang Dong-Ryul
Lee Soo-Cheol
Lee Tae-Jung
Mills & Onello LLP
Samsung Electronics Co,. Ltd.
Tran Thien F
LandOfFree
Transistor having a protruded drain does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Transistor having a protruded drain, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Transistor having a protruded drain will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3921312