Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2008-07-29
2008-07-29
Chaudhari, Chandra (Department: 2891)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S290000, C257SE21618
Reexamination Certificate
active
11674888
ABSTRACT:
A improved MOSFET (50, 51, 75, 215) has a source (60) and drain (62) in a semiconductor body (56), surmounted by an insulated control gate (66) located over the body (56) between the source (60) and drain (62) and adapted to control a conductive channel (55) extending between the source (60) and drain (62). The insulated gate (66) is perforated by a series of openings (61) through which highly doped regions (69) in the form of a series of (e.g., square) dots (69) of the same conductivity type as the body (56) are provided, located in the channel (55), spaced apart from each other and from the source (60) and drain (62). These channel dots (69) are desirably electrically coupled to a highly doped contact (64) to the body (56). The resulting device (50, 51, 75, 215) has a greater SOA, higher breakdown voltage and higher HBM stress resistance than equivalent prior art devices (20) without the dotted channel. Threshold voltage is not affected.
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Bose Amitava
Khemka Vishnu K.
Roggenbauer Todd C.
Zhu Ronghua
Chaudhari Chandra
Freescale Semiconductor Inc.
Ingrassia Fisher & Lorenz P.C.
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