Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2008-04-15
2008-04-15
Nguyen, Thanh (Department: 2813)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C427S098300, C118S058000, C118S603000
Reexamination Certificate
active
10735216
ABSTRACT:
Broadly speaking, a method and an apparatus are provided for depositing a material on a semiconductor wafer (“wafer”). More specifically, the method and apparatus provide for selective heating of a surface of the wafer exposed to an electroless plating solution. The selective heating is provided by applying radiant energy to the wafer surface. The selective heating of the wafer surface causes a temperature increase at an interface between the wafer surface and the electroless plating solution. The temperature increase at the interface in turn causes a plating reaction to occur at the wafer surface. Thus, material is deposited on the wafer surface through an electroless plating reaction that is initiated and controlled by varying the temperature of the wafer surface using an appropriately defined radiant energy source.
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Boyd John
Cook Joel M.
Dordi Yezdi
Maraschin Bob
Redeker Fred C.
Lam Research Corporation
Martine & Penilla & Gencarella LLP
Nguyen Thanh
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