Semiconductor device with high-k gate dielectric and...

Details Semiconductor device with high-k gate dielectric and... Semiconductor device with high-k gate dielectric and...

2007-10-09

2007-10-09

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S371000, C257S410000, C257SE27046

Reexamination Certificate

active

11185443

ABSTRACT:
A process and apparatus for a semiconductor device is provided. A device comprises a first transistor having a first charge carrier type. The first transistor comprises a high-k gate dielectric and a first doped electrode. The first charge carrier type comprises one of p-type and n-type and the first doped electrode comprises the other of p-type and n-type. The device further comprises a second transistor having a charge carrier type opposite the first charge carrier type. The second transistor comprises the high-k gate dielectric, and a second doped electrode, wherein the second doped electrode comprises the other of p-type and n-type.

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