Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Physical deformation
Reexamination Certificate
2007-10-09
2007-10-09
Smith, Bradley K. (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Physical deformation
C257S417000, C257SE29324, C438S050000, C310S309000, C073S514320, C073S514180
Reexamination Certificate
active
10943097
ABSTRACT:
A MEMS device which utilizes a capacitive sensor or actuator is enhancement by initially fabricating the capacitive assembly which comprises the sensor or actuator as two sets of interdigitated fingers in a noninterdigitated configuration. One of the two sets of fingers is coupled to a movable stage. The stage is moved from an initial position to a post-release position in which the two sets of interdigitated fingers are interdigitated with each other. The stage is carried by two pairs flexures which maintain the stability of motion of the stage and when in the post-release position provide stiffness which prevents deflection of the set of fingers coupled to the stage. The stage and hence the assembled sets of fingers are then locked into the post-release position.
REFERENCES:
patent: 5563343 (1996-10-01), Shaw et al.
patent: 5992233 (1999-11-01), Clark
patent: 5998906 (1999-12-01), Jerman et al.
patent: 6133670 (2000-10-01), Rodgers et al.
patent: 6211599 (2001-04-01), Barnes et al.
patent: 6384510 (2002-05-01), Grade et al.
patent: 6424504 (2002-07-01), Abe et al.
patent: 2002/0046602 (2002-04-01), Geen et al.
patent: 2002/0144548 (2002-10-01), Cohn et al.
patent: 2004/0035204 (2004-02-01), Durante et al.
patent: 2004/0113513 (2004-06-01), Borwick et al.
patent: 2004/0182155 (2004-09-01), Najafi et al.
patent: 2005/0126287 (2005-06-01), Malametz
Acar Cenk
Shkel Andrei M.
Fulk Steven J.
Myers Dawes Andras & Sherman LLP
Smith Bradley K.
The Regents of the University of California
LandOfFree
Post-release capacitance enhancement in micromachined... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Post-release capacitance enhancement in micromachined..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Post-release capacitance enhancement in micromachined... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3899650