Method of forming an interface for a semiconductor device

Details Method of forming an interface for a semiconductor device Method of forming an interface for a semiconductor device

2007-08-14

2007-08-14

Smith, Matthew (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S657000, C438S660000, C438S666000, C438S683000, C438S684000, C438S686000, C257SE29156, C257SE29161, C257SE21199, C257SE21203, C257SE21296

Reexamination Certificate

active

10787450

ABSTRACT:
In a semiconductor device using a polysilicon contact, such as a poly plug between a transistor and a capacitor in a container cell, an interface is provided where the poly plug would otherwise contact the bottom plate of the capacitor. The interface bars silicon from the plug from diffusing into the capacitor's dielectric. The interface can also include an oxygen barrier to prevent the poly plug from oxidizing during processing. Below the interface is a silicide layer to help enhance electrical contact with the poly plug. In a preferred method, the interface is created by selectively depositing a layer of titanium over a recessed poly plug to the exclusion of the surrounding oxide. The deposition process allows for silicidation of the titanium. The top half of the titanium silicide is then nitridized. A conformal ruthenium or ruthenium oxide layer is subsequently deposited, covering the titanium nitride and lining the sides and bottom of the container cell.

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