Semiconductor devices having a via hole and methods for...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C438S622000, C438S623000

Reexamination Certificate

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10922756

ABSTRACT:
Semiconductor devices having a via hole and methods for forming a via hole in a semiconductor device are disclosed. A disclosed method comprises performing a first etching process on an insulating layer to form a via hole, and performing a second etching process to enlarge a bottom of the via hole.

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patent: 2003/0036227 (2003-02-01), Hohnsdorf
patent: 10-1998-0028414 (2000-02-01), None
patent: 10-1999-0061966 (2001-07-01), None

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