Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
Reexamination Certificate
2007-11-20
2007-11-20
Smith, Bradley K. (Department: 2891)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Ion implantation of dopant into semiconductor region
C257S021000
Reexamination Certificate
active
10822225
ABSTRACT:
New photoresists are provided that can be applied and imaged with reduced undesired outgassing and/or as thick coating layers. Preferred resists of the invention are chemically-amplified positive-acting resists that contain photoactive and resin components.
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Barclay George G.
Cameron James F.
Sung Jin Wuk
Trefonas, III Peter
Corless Peter F.
Edwards Angell Palmer & & Dodge LLP
Frickey Darryl P.
Rohm and Haas Electronic Materials LLC
Smith Bradley K.
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