Method of etching high aspect ratio features

Details Method of etching high aspect ratio features Method of etching high aspect ratio features

2007-06-05

2007-06-05

Vinh, Lan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S706000, C438S714000, C216S067000

Reexamination Certificate

active

10492541

ABSTRACT:
A plasma processing system for and method of utilizing an improved etch chemistry for effectively etching high aspect ratio silicon features. The process chemistry employs precursor gases suitable for producing a fluorine/chlorine etch chemistry as well as precursor gases suitable for forming chemical bonds of sufficient strength to create stable feature side-walls. The improved process chemistries include SO2/SF4/SiCl4, SO2/SF4/Cl2, SO2/SiF4/SiCl4, SO2SIF4/Cl2, O2/F2/Cl2, N2 O/F2/Cl2, and NO2/F2/Cl2-based chemistries.

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