Self-aligned contact for silicon-on-insulator devices

Details Self-aligned contact for silicon-on-insulator devices Self-aligned contact for silicon-on-insulator devices

2007-02-06

2007-02-06

Fourson, George (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S365000, C438S233000, C438S672000, C438S595000, C438S303000, C438S283000

Reexamination Certificate

active

10409810

ABSTRACT:
A method for forming a self-aligned contact to an ultra-thin body transistor first providing an ultra-thin body transistor with source and drain regions operated by a gate stack; forming a contact spacer on the gate stack; forming a passivation layer overlying the transistor; forming a contact hole in the passivation layer exposing the contact spacer and the source/drain regions; filling the contact hole with an electrically conductive material; and establishing electrical communication with the source/drain region.

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