Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-11-13
2007-11-13
Dang, Phuc T. (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257S324000
Reexamination Certificate
active
11163470
ABSTRACT:
A method of fabricating a gate dielectric layer is described. First, a well is produced in a substrate. Later, the substrate is cleaned. Then the substrate is processed by a pre-annealed process. Afterwards, a gate dielectric layer is formed on the substrate. As a result, the on-current of the semiconductor device can be increased.
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patent: 6077737 (2000-06-01), Yang et al.
patent: 6159812 (2000-12-01), Cheek et al.
patent: 7115959 (2006-10-01), Andreoni et al.
patent: 2005/0032386 (2005-02-01), Chang et al.
Cheng Tzyy-Ming
Cho Da-Ching
Jeng Li-Shian
Lee Tung-Hsing
Shen Tzermin
Dang Phuc T.
Jianq Chyun IP Office
United Microelectronics Corp.
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