Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-02-27
2007-02-27
Ho, Tu-Tu (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S296000, C257S300000, C257SE27084
Reexamination Certificate
active
11096852
ABSTRACT:
A semiconductor device including square type storage nodes and a method of manufacturing the same. Word lines are formed on a semiconductor substrate Bit lines are formed separated from the word lines and perpendicular to the word lines. Active regions are defined to have a major axis slanted to the word line direction and the bit line direction. Storage nodes of capacitors are arranged along the word lines overlapping the word lines and arranged in a zigzag pattern that centers upon the bit lines. Storage node contacts are formed to electrically connect the active regions to the storage nodes, while being self-aligned with the bit lines, separated from each other on the word lines, and with a larger line width in the word line direction than the bit line direction to overlap large areas of the storage nodes.
REFERENCES:
patent: 6381165 (2002-04-01), Lee et al.
patent: 2002/0003256 (2002-01-01), Maegawa
patent: 10-98168 (1998-04-01), None
patent: 2003-0074478 (2003-09-01), None
English language abstract of Korean Publication No. 2003-0074478.
English language abstract of Japanese Publication No. 10-98168.
Ho Tu-Tu
Marger & Johnson & McCollom, P.C.
Samsung Electronics Co,. Ltd.
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