Semiconductor device and method of manufacturing...

Details Semiconductor device and method of manufacturing... Semiconductor device and method of manufacturing...

2007-11-27

2007-11-27

Ho, Tu-Tu (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S287000, C438S591000, C438S786000, C257S410000, C257S411000, C257SE21192

Reexamination Certificate

active

11407066

ABSTRACT:
Disclosed is a semiconductor device comprising a substrate, an insulating film formed above the substrate and containing a metal, Si, N and O, the insulating film containing metal-N bonds larger than the sum total of metal-metal bonds and metal-Si bonds, and an electrode formed above the insulating film.

REFERENCES:
patent: 5840204 (1998-11-01), Inada et al.
patent: 6063246 (2000-05-01), Wolfe et al.
patent: 2002/0098627 (2002-07-01), Pomarede et al.
patent: 2002/0149065 (2002-10-01), Koyama et al.
patent: 2004/0147101 (2004-07-01), Pomarede et al.
patent: 2003-77911 (2003-03-01), None
M. R. Visokay, et al.; “Application of HfSiON as a Gate Dielectric Material”; Applied Physics Letters, vol. 80; No. 17; Apr. 29, 2002; pp. 3183-3185.

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