Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2007-12-04

2007-12-04

Lee, Hsien-Ming (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S259000, C438S266000, C257SE21680, C257S314000, C257S315000

Reexamination Certificate

active

11728504

ABSTRACT:
Disclosed herein is a semiconductor device and method of manufacturing the same. A step between a memory cell formed in a cell region and a transistor formed in a peripheral circuit region is minimized, and the height of a gate in the memory cell is minimized. Accordingly, subsequent processes are facilitated and the electrical property of the device is thus improved.

REFERENCES:
patent: 6893918 (2005-05-01), Wang et al.
patent: 6984559 (2006-01-01), Wang et al.
patent: 2003-273209 (2003-09-01), None

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