Method of manufacturing self aligned non-volatile memory cells

Details Method of manufacturing self aligned non-volatile memory cells Method of manufacturing self aligned non-volatile memory cells

2007-02-27

2007-02-27

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S255000, C438S257000, C438S258000, C438S259000, C438S266000, C438S267000

Reexamination Certificate

active

10799060

ABSTRACT:
A method of forming an array of non-volatile memory cells includes forming a plurality of floating gate structures and shaping the plurality of floating gate structures to reduce the width of upper parts of floating gate structures. A first process forms floating gates by etching an upper portion of a polysilicon structure with masking elements in place to shape the floating gate. A second process etches recesses and protrusions in a polysilicon structure prior to etching the structure to form individual floating gates.

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