Non-destructive in-situ elemental profiling

Details Non-destructive in-situ elemental profiling Non-destructive in-situ elemental profiling

2007-08-14

2007-08-14

Berman, Jack I. (Department: 2881)

Radiant energy

Electron energy analysis

C250S307000, C438S005000, C438S010000

Reexamination Certificate

active

10907591

ABSTRACT:
A non-destructive in-situ elemental profiling of a layer in a set of layers method and system are disclosed. In one embodiment, a first emission of a plurality of photoelectrons is caused from the layer to be elementally profiled. An elemental profile of the layer is determined based on the emission. In another embodiment, a second emission of a plurality of photoelectrons is also received from the layer, and an elemental profile is determined by comparison of the resulting signals. A process that is altering the layer can then be controlled “on-the-fly” to obtain a desired material composition. Since the method can be employed in-situ and is non-destructive, it reduces turn around time and lowers wafer consumption. The invention also records the composition of all processed wafers, hence, removing the conventional statistical sampling problem.

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