Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Configuration or pattern of bonds
Reexamination Certificate
2007-02-06
2007-02-06
Schillinger, Laura M. (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Configuration or pattern of bonds
C257S738000, C257S698000
Reexamination Certificate
active
10322308
ABSTRACT:
A method and apparatus is provided that pertains to resisting crack initiation and propagation in electrical interconnections between components and substrates in ball grid array microelectronic packages. A hybrid of dielectric defined and non-dielectric defined electrical interconnects reduces the potential for electrical interconnection failure without having to control the dielectric defined interconnect ratio of substrates. In addition selective orientation of the dielectric defined edge portion of the electrical interconnect away from the point where cracks initiate resists crack propagation and component failure.
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Cheng Swee Kian
Goh Eng Huat
Tay Cheng Siew
Schillinger Laura M.
Schwabe Williamson & Wyatt P.C.
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