Method of forming single crystal semiconductor thin film on...

Details Method of forming single crystal semiconductor thin film on... Method of forming single crystal semiconductor thin film on...

2007-10-02

2007-10-02

Le, Thao P. (Department: 2818)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Self-aligned

C438S506000, C438S514000

Reexamination Certificate

active

11197836

ABSTRACT:
Methods of forming a single crystal semiconductor thin film on an insulator and semiconductor devices fabricated thereby are provided. The methods include forming an interlayer insulating layer on a single crystal semiconductor layer. A single crystal semiconductor plug is formed to penetrate the interlayer insulating layer. A semiconductor oxide layer is formed within the single crystal semiconductor plug using an ion implantation technique and an annealing technique. As a result, the single crystal semiconductor plug is divided into a lower plug and an upper single crystal semiconductor plug with the semiconductor oxide layer being interposed therebetween. That is, the upper single crystal semiconductor plug is electrically insulated from the lower plug by the semiconductor oxide layer. A single crystal semiconductor pattern is formed to be in contact with the upper single crystal semiconductor plug and cover the interlayer insulating layer. The single crystal semiconductor pattern is grown by an epitaxy growth technique using the upper single crystal semiconductor plug as a seed layer, or by a solid epitaxy growth technique using the upper single crystal semiconductor plug as a seed layer.

REFERENCES:
patent: 5834354 (1998-11-01), Kadosh et al.
patent: 6022766 (2000-02-01), Chen et al.
patent: 6172381 (2001-01-01), Gardner et al.
patent: 6429484 (2002-08-01), Yu
patent: 2005/0133789 (2005-06-01), Oh et al.
patent: 1020030044796 (2003-06-01), None
patent: 1020030044858 (2003-06-01), None

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