Method of growing GaN crystal, method of producing single...

Details Method of growing GaN crystal, method of producing single... Method of growing GaN crystal, method of producing single...

2007-12-04

2007-12-04

Kunemund, Robert (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

C117S095000, C117S096000, C117S101000, C117S104000, C257S101000, C257S074000, C257S075000

Reexamination Certificate

active

10933291

ABSTRACT:
Dotted seeds are implanted in a regular pattern upon an undersubstrate. A GaN crystal is grown on the seed implanted undersubstrate by a facet growth method. The facet growth makes facet pits above the seeds. The facets assemble dislocations from neighboring regions, accumulate the dislocations into pit bottoms, and make closed defect accumulating regions (H) on the seeds. The polycrystalline or slanting orientation single crystal closed defect accumulating regions (H) induce microcracks due to thermal expansion anisotropy. The best one is orientation-inversion single crystal closed defect accumulating regions (H). At an early stage, orientation-inverse protrusions are induced on tall facets and unified with each other above the seeds. Orientation-inverse crystals growing on the unified protrusions become the orientation-inverse single crystal closed defect accumulating regions (H).

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