Method for fabricating transistor of semiconductor device

Details Method for fabricating transistor of semiconductor device Method for fabricating transistor of semiconductor device

2007-06-19

2007-06-19

Lindsay, Jr., Walter L. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S682000, C438S683000, C438S649000, C438S199000, C257SE21444, C257SE21193, C257SE21415, C257SE21434

Reexamination Certificate

active

11023522

ABSTRACT:
A method for fabricating a transistor of semiconductor is disclosed. A disclosed method comprises: forming an STI structure and a well region in a silicon substrate; forming a first dummy gate electrode including spacers and a first gate oxide layer on the well region; forming source and drain regions including an LDD structure around the first dummy gate electrode by using the first dummy gate electrode and the spacers as a ion implantation mask, and performing a thermal treatment; removing the first dummy gate electrode and the first gate oxide layer under the first dummy gate electrode; forming a second dummy gate electrode and a second gate oxide layer; forming a thin nitride layer and a PMD on the silicon substrate including the second dummy gate electrode; performing a CMP process for the thin nitride layer and the PMD until the top of the spacers is exposed; removing the second dummy gate electrode and the second gate oxide layer; forming a third gate oxide layer and polysilicon for a gate electrode; performing another CMP process until the top of the spacers is exposed; and additionally etching the upper portion of the gate electrode.

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patent: 6492734 (2002-12-01), Watanabe
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patent: 2005/0233514 (2005-10-01), Bu et al.
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